SK Hynix Begins Production of World’s First 321-layer NAND Flash Memory Chips

SEOUL, Nov. 21 (Korea Bizwire) — SK hynix Inc. said Thursday it has started mass production of the industry’s first triple-level cell-based 321-layer NAND flash memory chips. NAND flash memory is a non-volatile memory storage medium that is widely used in memory cards, USB drives, solid-state drives (SSDs) and smartphones for general storage and transfer [...]The post SK Hynix Begins Production of World’s First 321-layer NAND Flash Memory Chips appeared first on Be Korea-savvy.

SK hynix Inc.’s new 321-layer NAND flash memory chips (Image courtesy of Yonhap) SEOUL, Nov. 21 (Korea Bizwire) — SK hynix Inc.

said Thursday it has started mass production of the industry’s first triple-level cell-based 321-layer NAND flash memory chips. NAND flash memory is a non-volatile memory storage medium that is widely used in memory cards, USB drives, solid-state drives (SSDs) and smartphones for general storage and transfer of data. It stacks memory cells vertically and is categorized into single-, multi-, triple- and quadruple-level cells.

SK hynix said it has become the world’s first supplier of NAND flash memory with more than 300 layers, building on the success of its 238-layer product, which entered mass production in June 2023. The company said it plans to begin delivering the 321-layer products to customers in the first half of next year. SK hynix said the latest development brings the company a step closer to becoming the leader of the AI storage market represented by SSDs for AI data centers and on-device AI.

(Yonhap).