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The South Korean company broke ground on NRD-K in 2022 and the facility is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. According to the company, the new facility – with its advanced infrastructure – will allow research and product-level verification to take place under one roof. The NRD-K complex is massive, covering about 109,000 square meters within its Giheung campus.
Samsung says that plans to invest about KRW 20 trillion (EUR 13.5 billion) by 2030 in the complex – which will also include an R&D-dedicated line scheduled to begin operation in mid-2025. Samsung's Giheung campus is the birthplace of the world’s first 64-megabit (Mb) DRAM in 1992.
With the establishment of the new R&D facility, Samsung is looking to usher in the latest developments in process technology and manufacturing tools, extending the site's legacy at the forefront of innovation. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment to accelerate the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with wafer-to-wafer bonding capabilities is also planned to dock.
Samsung invested KRW 8.87 trillion (EUR 6 billion) in R&D in the third quarter of this year, and continues to push to secure competitiveness in future technologies..
