IQE and X-FAB to develop European-based GaN Power device platform

With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE’s GaN epitaxy design and process expertise, along with X-FAB’s technology development and device fabrication capabilities to offer an optimised technology-substrate combination for automotive, data centre and consumer applications. The collaboration will provide fabless semiconductor companies with a leading-edge, off-the-shelf GaN platform – accelerating their innovation cycles and time-to-market.

The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics..